Samsung 50nm 16Gb NAND Flash
p2pnet.net News:- Samsung say it’s produced samples of the world’s first 16-gig NAND flash memory device built on a 50 nanometer process.
“The multi-level cell (MLC) design uses a 4KB page size instead of the 2KB used in competing designs,” says DigiTimes. “As a result, read speeds are double that of 2KB designs while write speeds are increased by 150%.”
The compamy says it’ll begin mass production its new MLC 16Gb NAND flash memory chips in Q1 2007 and that the new device will will help it reach its goal of producing 128GB SSDs by the first half of 2008.
SSDs (Solid State Disks) have the advantage of rapid response times without having to wait for a hard drive to spin up/seek and have drastically reduced power consumption compared to traditional hard drives, says DailyTech, adding, ” SSDs use zero watts when not being accessed, and as little as 200 milliwatts during read/write activities.”
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Also See:
DigiTimes – Samsung begins sampling 50nm 16Gb NAND flash, January 3, 2007
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